Dr. Supapan Seraphin

Ph.D., Arizona State University, 1990
Professor
The University of Arizona
Department of Materials Science and Engineering
Mines Bldg., Room 151
Tucson, AZ 85721
Phone: (520) 621-6075
email:seraphin@u.arizona.edu

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Teaching Interests:

• Fundamentals of Engineering (ENGR 102)
• Fundamentals of Materials for Engineers (MSE 331R)
• Experimental Methods for Microstructural Analysis (MSE 480/580)
• Transmission Electron Microscopy of Materials (MSE 489/589)
• Utilization of Computer Network in Microscopoy and Materials Science Education

Current Research

• Carbon Nanoclusters
  A new family of materials, the Fullerences and carbon nanotubes, were first prepared at our University. The dimension of these clusters falls into the nanoscale range, and requires electron microscopic characterization. We have established a correlation between the process parameters of the arc-discharge preparation, and the resulting microstructure of the clusters. This will eventually evolve into a systematic synthesis of nanoclusters of desired morphology. We have observed a large variety of growth phenomena, and have studied the encapsulation of ometals and their compounds into the hollow core of the tubular clusters. We have characterized clusters prepared by an alternative low-temperature method that is easier to control than the arc-discharge. The most recent study deals with the carbon coated ferromagnetic nanoparticles. The magnetic properties of individual particle are characterized by electron holography.



• SIMOX Silicon-on-Insulator Materials
  This project is a collaboration with Ibis Technology Corp., Massachusetts, a major supplier of SIMOX silicon-on-insulator wafers. The study deals with the sructural characterization and defect analysis. A correlation of the defect formation and the processing conditions is investigated. A detailed study examines the defect evolution and the oxide precipitate growth during the temperature ramping and annealing. Several types of defects are identified. Their association with precipitates and their annihilation are of great importance to the final defect density in SIMOX.

Recent Publications

A Chapter in Materials Science Handbook

G.W. Chandler and S. Seraphin, "Scanning Electron Microscopy,"Methods in Materials Research: A Current Protocols Publication, Editor-in-Chief: Elton N. Kaufmann, John Wiley & Sons, Inc., 2000, Unit 11a.1 (14 pages).

Refereered Journal Articles

Significance of authorship: first author is the major contributor. Graduate students marked with +.


1. J. Jeoung+, P. Anderson, and S. Seraphin, “Microstructural Evolution of Low-Dose Separation by Implanted Oxygen Materials Implanted at 65 and 100 keV”, J. Mater. Res. 18, 2177-2187 (2003).



2. B. Johnson+, J. Jeoung+, P. Anderson, and S. Seraphin, “Evolution of Microstructure during Annealing of Low-Dose SIMOX Wafers Implanted at 65 keV”, J. Mat. Sc. Mat. Electronics, 13, 303-308 (2002).



3. B. Johnson+, Y. Tan+, P. Anderson, S. Seraphin, and M. Anc, “The Effects of Surface Capping during Annealing on the Microstructure of Ultrathin SIMOX Materials”, J. Electrochem. Soc. 148, G63-G67 (2001).



4. R. Wang+, J. Yang+, Z. Zheng, M.D. Carducci, J. Jiao+, and S. Seraphin, “Dendron-Controlled Nucleation and Growth of Gold Nanoparticles” Chem. Int. Ed., 40, 549-552 (2001).



5. Jiao+, B. Johnson+, S. Seraphin, M. Anc, R. Dolan, B. Cordts, “Formation of Si Islands in the Buried Oxide Layers of Ultrathin SIMOX Structures Implanted at 65 keV”, Mat. Sc.&Eng.B72, 150-155 (2000).



6. J. Jiao+ and S. Seraphin, “Single-Walled Tubes and Encapsulated Nanoparticles: Comparison of Structure Properties of Carbon Nanoclusters Prepared by Three Different Methods,” J. Phys. & Chem. Of Solid, 61, 1055-1067 (2000).



7. J. Jiao+, B. Johnson+, S. Seraphin, M. Anc, R. Dolan, and B. Cordts, “Formation of Si Islands in the Buried Oxide Layers of Ultra-Thin SIMOX Structures Implanted at 65 keV,” Mater. Sc. & Eng., B72, 150-155 (2000).



8. S. Seraphin, C. Beeli, J-M. Bonard, J. Jiao+, P.A. Stadelmann, A. Chatelain, "Magnetization of Carbon-Coated Ferromagnetic Nanoclusters Determined by Electron Holography," J. Mater. Res., 14, 2861-2870 (1999).



9. G. Li+, J. Jiao+, S. Seraphin, and S. Raghavan, "Masking Effect of Copper During Anisotropic Etching of Silicon in Buffered Hydrofluoric Acid Solutions," J. Appl. Phys., 85, 1857-1863 (1999).