Dunbar P. Birnie, III, M. H. Jilavi, T. Krajewski, and R. Nass
Source: J. Sol-Gel Sci. and Techn. 13, 855-859 (1998)
Abstract: Recent studies to improve the crystallization of PZT
on silicon by using a very thin intermediate barrier layer are presented.
Barrier layer compositions which displayed beneficial effects included:
SrTiO3, BaTiO3, BaZrO3, LaAlO3
and NdAlO3. X-ray diffraction was performed to monitor the phase
transformation using barrier layers. High Resolution Transmission Electron
Microscopy (HRTEM) was used to characterize the sample with the SrTiO3
interlayer. Energy Dispersive X-ray Spectroscopy (EDX) was applied for
microchemical analysis and the lead distribution through the film depth
was determined with a step-scanning method. Seeding layers which were nanocrystalline
and dense were best at promoting PZT microstructure development because
of increasing nucleation as well as reducing interdiffusion.