Chai, Francis K.; Brews, J.R.; Schrimpf, R.D.; Birnie, D.P. III
Source: Journal of Applied Physics v 82 n 5 Sept 1 1997 Am Inst Phys Woodbury NY USA p 2505-2516

Abstract: A domain model is proposed and compared to the measured capacitance-voltage (CV) characteristic of lead zirconate titanate (PZT) capacitors with various niobium doping levels. For zero dopant-ion charge, the model has a spatially uniform electric field and a simple multiple-domain structure with two domain orientation. The zero-dopant model is then generalized to allow a variation of the electric field with depth and to include a physically reasonable, position-dependent domain structure. Based on the nonuniform electric-field model, a position-dependent permittivity is deduced and doping profiling is performed based on permittivity mode. Based on the proposed permittivity model and the approximate doping profiles extracted from the CV measurement, the measured CV characteristics of PZT capacitors with various niobium doping levels are predicted.