Authors: Kneer, E.A.; Birnie, D.P. III; Teowee, G.; Podlesny, J.C.
Source: Proceedings of the 9th IEEE International Symposium on Applications of Ferroelectrics, Aug (1994)  446-449

Abstract: Sol-gel derived lead zirconate titanate (PZT) films were deposited and crystallized on platinized Si/SiO₂ and Al₂O₃ wafer substrates in the film thickness range of 500 - 7000 angstrom. Electrical testing was conducted to evaluate the effect of PZT film thickness on capacitor performance. Optical microscopy and AFM data were used to identify factors which might cause shorting in crystallized PZT films. Thin films of Ti or TiO₂ were used for Pt bottom and top electrode adhesion in the substrate/Pt/PZT/Pt structured device. The effect of these adhesion layers has been investigated for several electrode composites. The fatigue behavior of these devices has been analyzed and compared.