Author: Birnie, Dunbar P. III
Source: Journal of the American Ceramic Society 69 (1986) c33-c35

Abstract: A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single-crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti-site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.