MSE 489/589 - Transmission Electron
Microscopy of Materials
Fall Semester
2000-01 Catalog Data:
MSE 489/589 - Transmission Electron Microscopy of Materials (3) I Transmission
electron microscopy in materials characterization. specimen preparation; instrumental techniques;
interpretation of micrographs and diffraction patterns; micro- and nano- analysis in transmission
elecron microscopy. 2R, 3L. 3ES. P, MSE 480 or consult department enrolling.
May be convened with MSE 589.
Instructor:
Supapan Seraphin, Associate Professor of Materials Science and Engineering
Textbook:
D.B. Williams and C.B. Carter, Transmission Electron Microscopy,
Prenum Press, New York, 1996.
References:
David B. Williams, Practical Analytical Electron Microscopy in Materials Science,
Philips electronic Instruments, Inc., revised 1987.
G.Thomas and M.J. Goringe, Transmission electron Microscopy of Materials,
John Wiley & Sons, NY, 1979.
P. Hirsh, A. Howie, R.B. Nicholson, D.W. Pahley, and M.J. Whelan, Electron Microscopy
of Thin Crystals, Robert E. Krieger Publishing Co., Huntington, NY, 1965.
Lawrence E. Murr, Electron and Ion Microscopy and Microanalysis: Principles and Applications,
2nd edition, Marcel Dekker Inc., 1991.
J.C.H. Spence, Experimental High Resolution electron Microscopy,2nd Edition
Oxford University Press, NY, 1988.
P. Buseck, J.M. Cowley and l. Eyring, High Resolution Transmission Electron Microscopy
and Associated Techniques, Oxford University Press, NY 1988.
M.H. Loretto and R.E. Smallman, Defect Analysis in Electron Microscopy,
Chapman and Hall, London, 1975.
Prerequisites by Topic:
Advanced knowledge of physics or materials science.
Basic knowledge of crystallography, Miller indices and the stereographic projection.
Some knowledge of X-ray diffraction.
Goals:
This is a hands-on course intended to provide the necessary theory and individual practical
training in the methods of transmission electron microscopy, instrumental techniques and
interpretive application of contrast and diffraction principles, to enable graduate students to apply
this method of structural characterization to problems connected with their research projects.
Small group laboratory session are given to make the students confident with operation of the
instrument. A series of exercises are carried out by each student to afford practice in the various
capabilities of the TEM method.
Course Topics (Class hours):
General Introduction (1)
Basis for electron microscopy of materials
Wavelength and resolution
Applications and limitation
Electron Optics and Electron Optical Design (1)
Electromagnetic lenses
Lens aberrations
Depth of field and depth of focus
Formation of Diffraction Patterns and Images (2)
Bright and dark field images
weak beam images
Selected area diffraction
Phase contrast images
Crystallography (6)
Indexing planes and directions in crystal
Plane normals
Stereographic projection
Geometry of Electron Diffraction (6)
Bragg's law
Definitions of reciprocal lattice and Eqald sphere
Camera length, camera constant
Elastic scattering factors
Type of Diffraction Patterns (6)
Ring patterns
Spot patterns
Kikuchi patterns
Kikuchi Diffraction Patterns (6)
Geometry of Kikuchi line and band formation
Kikuchi cone geometry
Relationship to spot patterns
Determination of deviation parameters
Relationship to stereographic projection
Uses of diffraction patterns and Kikuchi bands
Transmission Electron Microscopy of Crystalline Materials (10)
Kinematical approximation and two-beam dynamical approximation
Perfect crystals
Contrast in imperfect crystals
Interpretation of TEM Micrographs (6)
General visibility criteria
Burgers vector analysis
Examples of Defect Analysis (4)
Differentiation between similar types of image/diffraction pattern
Two lecture sessions and a three-hour laboratory session per week.
Laboratory reports.
A midterm examination and a final examination.
*Note: Graduate-Level: Requirements include an additional term paper
Computer Usage:
Students are required to do interactive exercises developed under
the supervision of the instructor at the Computer Network Laboratory for Microscopy education, a
Sun Workstation Laboratory supported by NSF, ILI program.
In addition, MacIntosh software programs on "Electron Diffraction" and MacTempas," image
simulation programs are available to be used to reinforce lecture material. This will give
studetns an opportunity to gain a deeper understanding of electron diffraction concepts.
Laboratory Projects:
The instruments available for student use are Hitachi H-8100 microscopes (200 keV). Excercises
are as follows:
Electron Microscopy
Instrumentation and hardware
Alignment, focus, set, contrast, and correct astigmatism
Practice Alignment
Individual Oral Examination
Photography of Amorphous Carbon Film and Graphite Specimen
Through-focus series
Learn dark room techniques
Diffraction Patterns
Amorpohous ring pattern
Si single crystal spot patterns (110 and 100 zone axis)
Kikuchi patterns
Index the patterns
Crystal Defect Imaging by Two-Beam Conditions
Stacking faults, dislocations, and precipitates under different two-beam conditions
Learn bright field, dark field, and weak beam dark field imaging
Burgers Vector Analysis
High resolution imaging of Si and carbon nanotubes
